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SiRA10DP
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
: :
Note s s :
Vishay Siliconix
t t 1 t 1 1
t t 2 t 2 2
0.1
0.01
0.1
0.05
0.02
S ingle Pul s e
P P DM
t t 1 t 1 1
t t 2 t 2 2
1. Duty Cycle, D = =
s
2. Per Unit Ba s e e = = R thJA = = 70 °C/W
T A P Z
3. T JM - - T T A = = P DM Z thJA(t)
S
4. S urface Mounted
0.0001
0.001
0.01
0.1
1
10
100
1000
Sq uare Wave Pul s e Duration ( s )
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
S ingle Pul s e
0.01
0.0001
0.001
0.01
0.1
1
Sq uare Wave Pul s e Duration ( s )
Normalized Thermal Transient Impedance, Junction-to-Case
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63820 .
S14-0158-Rev. B, 03-Feb-14
6
Document Number: 63820
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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